مشاهده مشخصات مقاله
Ultra-Leaky SRAM Cells Caused by Process Variation: Detection and Leakage Suppression at System-Level
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نویسنده (ها) |
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Maziar Goudarzi
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Tohru Ishihara
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Hiroto Yasuura
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مربوط به کنفرانس |
دوازدهمین کنفرانس بینالمللی سالانه انجمن کامپیوتر ایران |
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چکیده |
Exceptionally leaky transistors are increasingly more frequent in nano-scale technologies due to lower
threshold voltage and its increased variation. Such leaky transistors may even change position with changes in
the operating voltage and temperature, and hence, static physical redundancy is not sufficient to tolerate such
threats to yield. We show that in SRAM cells this leakage depends on the cell value and propose a first softwarebased
runtime technique that suppresses such abnormal leakages by storing safe values in the corresponding
cache lines before going to standby mode. Analysis shows the performance penalty is, in the worst case, linearly
dependent to the number of so-cured cache lines while the energy saving linearly increases by the time spent in
standby mode. Analysis and experimental results on commercial processors confirm that the technique is viable
if the standby duration is more than a small fraction of a second. |
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قیمت |
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برای اعضای سایت : ۱٠٠,٠٠٠ ریال
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برای دانشجویان عضو انجمن : ۲٠,٠٠٠ ریال
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برای اعضای عادی انجمن : ۴٠,٠٠٠ ریال
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